RF Micro Devices (News - Alert), a manufacturer of high-performance semiconductor components, has unveiled the CXE-1089Z GaAs pHEMT LNA designed cable set-top box and digital television (DTV) applications. RFMD (News - Alert) claims that the CXE-1089Z facilitates low noise figure and low current consumption to fulfill the increasing performance requirements of next-generation, higher-bandwidth devices.

 

The CXE-1089Z features RFMD's active bias circuitry, which steadies bias current across changes in threshold voltage related to temperature and process variation, thus reducing current consumption.

 

The GaAs pHEMT LNA leverages a Darlington configuration as well, with an optional external bias control which further reduces current consumption and decreases the thermal profile of the end product. And, it doesn’t forget to maintain linear RF performance optimized for each application.

 

The GaAs pHEMT LNA also comes with a single 5 V supply operation, noise Figure of 2.8 dB typical, CTB of -79 dBc and CSO of -66 dBc at 110 channels, +15 dBmV/channel at the inputm, gain response of 13dB +/- 0.4dB over 50 to 1000 MHz and input return loss of greater than 18 dB.

 

"Unlike competing devices focused on a single performance parameter, the CXE-1089Z delivers a optimized blend of low noise figure, low multi-carrier distortion and low current consumption," said Alastair Upton, general manager of RFMD's Broadband and Consumer Business Unit. "This unique blend of performance, combined with our ability to deliver a broad portfolio of CATV products, were key elements to RFMD's recent design win at a leading set-top box and tuner module OEM with the CXE-1089Z."